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AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 400PCS/BOX TUBE
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 10000PCS/WEEK
Detail Information
Place of Origin
TAIWAN
Brand Name
Infineon
Certification
ROHS
Model Number
AUIRG4PH50S
Product Category:
IGBT Transistors
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1.2 KV
Collector-Emitter Saturation Voltage:
1.47 V
Maximum Gate Emitter Voltage:
- 20 V, + 20 V
Continuous Collector Current At 25 C:
141 A
Pd - Power Dissipation:
543 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Height:
20.7 Mm
Length:
15.87 Mm
Width:
5.31 Mm
Factory Packaging Quantity:
400PCS/BOX
Product Description

  AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

 

1.FEATURES

Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
• Industry standard TO-247AC package
• Lead-Free
• Automotive Qualified *

2.BENEFITS

Generation 4 IGBT's offer highest efficiency available

IGBT's optimized for specified application conditions

 

AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT 0

Tags: 

lm338k

products
PRODUCTS DETAILS
AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT
MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 400PCS/BOX TUBE
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 10000PCS/WEEK
Detail Information
Place of Origin
TAIWAN
Brand Name
Infineon
Certification
ROHS
Model Number
AUIRG4PH50S
Product Category:
IGBT Transistors
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1.2 KV
Collector-Emitter Saturation Voltage:
1.47 V
Maximum Gate Emitter Voltage:
- 20 V, + 20 V
Continuous Collector Current At 25 C:
141 A
Pd - Power Dissipation:
543 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Height:
20.7 Mm
Length:
15.87 Mm
Width:
5.31 Mm
Factory Packaging Quantity:
400PCS/BOX
Minimum Order Quantity:
10PCS
Price:
NEGOTIABLE
Packaging Details:
400PCS/BOX TUBE
Delivery Time:
2-3DAYS
Payment Terms:
T/T, Western Union
Supply Ability:
10000PCS/WEEK
Product Description

  AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

 

1.FEATURES

Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
• Industry standard TO-247AC package
• Lead-Free
• Automotive Qualified *

2.BENEFITS

Generation 4 IGBT's offer highest efficiency available

IGBT's optimized for specified application conditions

 

AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT 0

Tags: 

lm338k

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