Place of Origin: | TAIWAN |
Brand Name: | Infineon |
Certification: | ROHS |
Model Number: | AUIRG4PH50S |
Minimum Order Quantity: | 10PCS |
---|---|
Price: | NEGOTIABLE |
Packaging Details: | 400PCS/BOX TUBE |
Delivery Time: | 2-3DAYS |
Payment Terms: | T/T, Western Union |
Supply Ability: | 10000PCS/WEEK |
Product Category: | IGBT Transistors | Technology: | Si |
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Mounting Style: | Through Hole | Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 1.2 KV | Collector-Emitter Saturation Voltage: | 1.47 V |
Maximum Gate Emitter Voltage: | - 20 V, + 20 V | Continuous Collector Current At 25 C: | 141 A |
Pd - Power Dissipation: | 543 W | Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C | Height: | 20.7 Mm |
Length: | 15.87 Mm | Width: | 5.31 Mm |
Factory Packaging Quantity: | 400PCS/BOX |
AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT
1.FEATURES
Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
• Industry standard TO-247AC package
• Lead-Free
• Automotive Qualified *
2.BENEFITS
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Contact Person: Mr. 段
Tel: 86-755-82715827
Fax: 86-755-22678033
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