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IPW65R041CFD Infineon MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2
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IPW65R041CFD Infineon MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2
  • name
  • name

IPW65R041CFD Infineon MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2

MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 240PCS/BOX TUBE
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 2400PCS/WEEK
Details Information
Product Description
Detail Information
Place of Origin
CHINA
Brand Name
Infineon
Certification
ROHS
Model Number
IPW65R041CFD
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
68.5 A
Rds On - Drain-Source Resistance:
37 MOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs Th - Gate-Source Threshold Voltage:
3.5 V
Qg - Gate Charge:
300 NC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
500 W
Fall Time:
8 Ns
Height:
21.1 Mm
Length:
16.13 Mm
Width:
5.21 Mm
Rise Time:
28 Ns
Typical Turn-Off Delay Time:
127 Ns
Typical Turn-On Delay Time:
34 Ns
Factory Packing Quantity:
240
Product Description

IPW65R041CFD Infineon MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2

 

1.

IPW65R041CFD Infineon MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2 0
 

IPW65R041CFD Infineon MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2 1

 

Tags: 

lm338k

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products
PRODUCTS DETAILS
Products

Electronic Integrated Circuits

IGBT Module

GPS Module

Quectel Module

3G Module

CCD CMOS Sensor

2G Module

IGBT Driver

TE Relay

GSM GPRS Module

IP Camera Soc

LTE 4G Module

Switching Power Supply

Motor Cooling Fan

PCB Prototype

PCB Assembly
IPW65R041CFD Infineon MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2
  • name
  • name
IPW65R041CFD Infineon MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2
MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 240PCS/BOX TUBE
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 2400PCS/WEEK
Detail Information
Product Description
Detail Information
Place of Origin
CHINA
Brand Name
Infineon
Certification
ROHS
Model Number
IPW65R041CFD
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
68.5 A
Rds On - Drain-Source Resistance:
37 MOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs Th - Gate-Source Threshold Voltage:
3.5 V
Qg - Gate Charge:
300 NC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
500 W
Fall Time:
8 Ns
Height:
21.1 Mm
Length:
16.13 Mm
Width:
5.21 Mm
Rise Time:
28 Ns
Typical Turn-Off Delay Time:
127 Ns
Typical Turn-On Delay Time:
34 Ns
Factory Packing Quantity:
240
Minimum Order Quantity:
10PCS
Price:
NEGOTIABLE
Packaging Details:
240PCS/BOX TUBE
Delivery Time:
2-3DAYS
Payment Terms:
T/T, Western Union
Supply Ability:
2400PCS/WEEK
Product Description

IPW65R041CFD Infineon MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2

 

1.

IPW65R041CFD Infineon MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2 0
 

IPW65R041CFD Infineon MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2 1

 

Tags: 

lm338k

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