Shenzhen Hongxinwei Technology Co., Ltd
To adopt new technology,to produce products of quality,to offer high-class service.
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| Place of Origin: | Morocco |
| Brand Name: | ST |
| Certification: | ROHS |
| Model Number: | STP12NM50 |
| Minimum Order Quantity: | 10PCS |
|---|---|
| Price: | NEGOTIABLE |
| Packaging Details: | 1000PCS/TUBE |
| Delivery Time: | 2-3DAYS |
| Payment Terms: | T/T, Western Union |
| Supply Ability: | 3000PCS/WEEK |
| Technology: | Si | Mounting Style: | Through Hole |
|---|---|---|---|
| Transistor Polarity: | N-Channel | Number Of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 500 V | Id - Continuous Drain Current: | 12 A |
| Rds On - Drain-Source Resistance: | 350 MOhms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs Th - Gate-Source Threshold Voltage: | 3 V | Qg - Gate Charge: | 39 NC |
| Minimum Operating Temperature: | - 65 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 160 W | Channel Mode: | Enhancement |
| Configuration: | Single | Forward Transconductance - Min: | 5.5 S |
| Height: | 9.15 Mm | Length: | 10.4 Mm |
| Width: | 4.6 Mm | Rise Time: | 10 Ns |
| Typical Turn-On Delay Time: | 20 Ns | Factory Packing Quantity: | 1000 |
1.Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
2.Description
These N-channel Power MOSFETs are developed using STMicroelectronics'revolutionary MDmesh technology, which associates the multiple drain process withthe company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST'sproprietary strip technique, these Power MOSFETs boast an overall dynamicperformance which is superior to similar products on the market
3.Applications
Switching applications
Contact Person: Mr. 段
Tel: 86-755-82715827
Fax: 86-755-22678033
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