|
| MOQ: | 10PCS |
| Price: | NEGOTIABLE |
| Standard Packaging: | 1000PCS/TUBE |
| Delivery Period: | 2-3DAYS |
| Payment Method: | T/T, Western Union |
| Supply Capacity: | 3000PCS/WEEK |
1.Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
2.Description
These N-channel Power MOSFETs are developed using STMicroelectronics'revolutionary MDmesh technology, which associates the multiple drain process withthe company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST'sproprietary strip technique, these Power MOSFETs boast an overall dynamicperformance which is superior to similar products on the market
3.Applications
Switching applications
|
|
| MOQ: | 10PCS |
| Price: | NEGOTIABLE |
| Standard Packaging: | 1000PCS/TUBE |
| Delivery Period: | 2-3DAYS |
| Payment Method: | T/T, Western Union |
| Supply Capacity: | 3000PCS/WEEK |
1.Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
2.Description
These N-channel Power MOSFETs are developed using STMicroelectronics'revolutionary MDmesh technology, which associates the multiple drain process withthe company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST'sproprietary strip technique, these Power MOSFETs boast an overall dynamicperformance which is superior to similar products on the market
3.Applications
Switching applications
