|
| MOQ: | 10PCS |
| Price: | NEGOTIABLE |
| Standard Packaging: | 4000PCS/REEL |
| Delivery Period: | 2-3DAYS |
| Payment Method: | T/T, Western Union |
| Supply Capacity: | 20000PCS/WEEK |
NDT3055L onsemi / Fairchild Transistor - N-Channel,Logic Level, EnhancementMode Field Effect
1.General Description
This Logic Level N−Channel enhancement mode power field effecttransistor is produced using onsemi’s proprietary, high cell density,DMOS technology. This very high density process is especiallytailored to minimize on−state resistance and provide superiorswitching performance, and withstand high energy pulse in theavalanche and commutation modes. This device is particularly suitedfor low voltage applications such as DC motor control and DC/DCconversion where fast switching, low in−line power loss, andresistance to transients are needed
2.Features
•4 A, 60 V♦RDS(ON) = 0.100 W @ VGS = 10 V
♦RDS(ON) = 0.120 W @ VGS = 4.5 V
•Low Drive Requirements Allowing Operation Directly from LogicDrivers. VGS(TH) < 2V.
•High Density Cell Design for Extremely Low RDS(ON).
•High Power and Current Handling Capability in a Widely UsedSurface Mount Package.
•This is a Pb−Free Device
|
|
| MOQ: | 10PCS |
| Price: | NEGOTIABLE |
| Standard Packaging: | 4000PCS/REEL |
| Delivery Period: | 2-3DAYS |
| Payment Method: | T/T, Western Union |
| Supply Capacity: | 20000PCS/WEEK |
NDT3055L onsemi / Fairchild Transistor - N-Channel,Logic Level, EnhancementMode Field Effect
1.General Description
This Logic Level N−Channel enhancement mode power field effecttransistor is produced using onsemi’s proprietary, high cell density,DMOS technology. This very high density process is especiallytailored to minimize on−state resistance and provide superiorswitching performance, and withstand high energy pulse in theavalanche and commutation modes. This device is particularly suitedfor low voltage applications such as DC motor control and DC/DCconversion where fast switching, low in−line power loss, andresistance to transients are needed
2.Features
•4 A, 60 V♦RDS(ON) = 0.100 W @ VGS = 10 V
♦RDS(ON) = 0.120 W @ VGS = 4.5 V
•Low Drive Requirements Allowing Operation Directly from LogicDrivers. VGS(TH) < 2V.
•High Density Cell Design for Extremely Low RDS(ON).
•High Power and Current Handling Capability in a Widely UsedSurface Mount Package.
•This is a Pb−Free Device
