Shenzhen Hongxinwei Technology Co., Ltd
To adopt new technology,to produce products of quality,to offer high-class service.
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| Place of Origin: | CHIAN |
| Brand Name: | ON |
| Certification: | ROHS |
| Model Number: | NDT3055L |
| Minimum Order Quantity: | 10PCS |
|---|---|
| Price: | NEGOTIABLE |
| Packaging Details: | 4000PCS/REEL |
| Delivery Time: | 2-3DAYS |
| Payment Terms: | T/T, Western Union |
| Supply Ability: | 20000PCS/WEEK |
| Product Category: | MOSFET | Transistor Polarity: | N-Channel |
|---|---|---|---|
| Number Of Channels: | 1 Channel | Vds - Drain-Source Breakdown Voltage: | 60 V |
| Id - Continuous Drain Current: | 4 A | Rds On - Drain-Source Resistance: | 70 MOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V | Vgs Th - Gate-Source Threshold Voltage: | 1 V |
| Qg - Gate Charge: | 20 NC | Minimum Operating Temperature: | - 65 C |
| Maximum Operating Temperature: | + 150 C | Pd - Power Dissipation: | 3 W |
| Channel Mode: | Enhancement | Fall Time: | 7 Ns |
| Forward Transconductance - Min: | 7 S | Rise Time: | 7.5 Ns |
| Typical Turn-Off Delay Time: | 20 Ns | Typical Turn-On Delay Time: | 5 Ns |
| Height: | 1.8 Mm | Length: | 6.5 Mm |
| Width: | 3.5 Mm | Factory Packing Quantity: | 4000 |
NDT3055L onsemi / Fairchild Transistor - N-Channel,Logic Level, EnhancementMode Field Effect
1.General Description
This Logic Level N−Channel enhancement mode power field effecttransistor is produced using onsemi’s proprietary, high cell density,DMOS technology. This very high density process is especiallytailored to minimize on−state resistance and provide superiorswitching performance, and withstand high energy pulse in theavalanche and commutation modes. This device is particularly suitedfor low voltage applications such as DC motor control and DC/DCconversion where fast switching, low in−line power loss, andresistance to transients are needed
2.Features
•4 A, 60 V♦RDS(ON) = 0.100 W @ VGS = 10 V
♦RDS(ON) = 0.120 W @ VGS = 4.5 V
•Low Drive Requirements Allowing Operation Directly from LogicDrivers. VGS(TH) < 2V.
•High Density Cell Design for Extremely Low RDS(ON).
•High Power and Current Handling Capability in a Widely UsedSurface Mount Package.
•This is a Pb−Free Device
Contact Person: Mr. 段
Tel: 86-755-82715827
Fax: 86-755-22678033
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