Place of Origin: | CHIAN |
Brand Name: | Infineon / IR |
Certification: | ROHS |
Model Number: | IRLML5203TRPBF |
Minimum Order Quantity: | 10PCS |
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Price: | NEGOTIABLE |
Packaging Details: | 3000PCS/REEL |
Delivery Time: | 2-3DAYS |
Payment Terms: | T/T, Western Union |
Supply Ability: | 18000PCS/WEEk |
Product Category: | MOSFET | Technology: | Si |
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Transistor Polarity: | P-Channel | Number Of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V | Id - Continuous Drain Current: | 3 A |
Rds On - Drain-Source Resistance: | 165 MOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs Th - Gate-Source Threshold Voltage: | 4 V | Qg - Gate Charge: | 9.5 NC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 1.25 W | Channel Mode: | Enhancement |
Height: | 1.1 Mm | Length: | 2.9 Mm |
Width: | 1.3 Mm | Factory Packing Quantity: | 3000 |
IRLML5203TRPBF Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl
1.Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
RoHS Compliant, Halogen-Free
2.Description
These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the extremely lowon-resistance per silicon area. This benefit provides thedesigner with an extremely efficient device for use in batteryand load management applications.
A thermally enhanced large pad leadframe has beenincorporated into the standard SOT-23 package to produce aHEXFET Power MOSFET with the industry's smallest footprint.This package, dubbed the Micro3TM, is ideal for applicationswhere printed circuit board space is at a premium. The lowprofile (<1.1mm) of the Micro3 allows it to fit easily intoextremely thin application environments such as portableelectronics and PCMCIA cards. The thermal resistance andpower dissipation are the best available
3.
Contact Person: Mr. 段
Tel: 86-755-82715827
Fax: 86-755-22678033
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