Shenzhen Hongxinwei Technology Co., Ltd

To adopt new technology,to produce products of quality,to offer high-class service.

Home ProductsElectronic Integrated Circuits

IRLML5203TRPBF Infineon / IRUltra Low On-Resistance Low Gate Charge P-Channel MOSFET MOSFET

IRLML5203TRPBF Infineon / IRUltra Low On-Resistance Low Gate Charge P-Channel MOSFET MOSFET

  • IRLML5203TRPBF Infineon / IRUltra  Low  On-Resistance Low Gate Charge P-Channel MOSFET MOSFET
  • IRLML5203TRPBF Infineon / IRUltra  Low  On-Resistance Low Gate Charge P-Channel MOSFET MOSFET
IRLML5203TRPBF Infineon / IRUltra  Low  On-Resistance Low Gate Charge P-Channel MOSFET MOSFET
Product Details:
Place of Origin: CHIAN
Brand Name: Infineon / IR
Certification: ROHS
Model Number: IRLML5203TRPBF
Payment & Shipping Terms:
Minimum Order Quantity: 10PCS
Price: NEGOTIABLE
Packaging Details: 3000PCS/REEL
Delivery Time: 2-3DAYS
Payment Terms: T/T, Western Union
Supply Ability: 18000PCS/WEEk
Contact Now
Detailed Product Description
Product Category: MOSFET Technology: Si
Transistor Polarity: P-Channel Number Of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 3 A
Rds On - Drain-Source Resistance: 165 MOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs Th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 9.5 NC
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.25 W Channel Mode: Enhancement
Height: 1.1 Mm Length: 2.9 Mm
Width: 1.3 Mm Factory Packing Quantity: 3000

        IRLML5203TRPBF Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl

 

 

 

1.Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
RoHS Compliant, Halogen-Free

2.Description
These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the extremely lowon-resistance per silicon area. This benefit provides thedesigner with an extremely efficient device for use in batteryand load management applications.
A thermally enhanced large pad leadframe has beenincorporated into the standard SOT-23 package to produce aHEXFET Power MOSFET with the industry's smallest footprint.This package, dubbed the Micro3TM, is ideal for applicationswhere printed circuit board space is at a premium. The lowprofile (<1.1mm) of the Micro3 allows it to fit easily intoextremely thin application environments such as portableelectronics and PCMCIA cards. The thermal resistance andpower dissipation are the best available

3.IRLML5203TRPBF Infineon / IRUltra  Low  On-Resistance Low Gate Charge P-Channel MOSFET MOSFET 0

 

Tag:

lm338k

Contact Details
Shenzhen Hongxinwei Technology Co., Ltd

Contact Person: Mr. 段

Tel: 86-755-82715827

Fax: 86-755-22678033

Send your inquiry directly to us
Other Products