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IRLML5203TRPBF Infineon / IRUltra Low On-Resistance Low Gate Charge P-Channel MOSFET MOSFET

IRLML5203TRPBF Infineon / IRUltra Low On-Resistance Low Gate Charge P-Channel MOSFET MOSFET

MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 3000PCS/REEL
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 18000PCS/WEEk
Detail Information
Place of Origin
CHIAN
Brand Name
Infineon / IR
Certification
ROHS
Model Number
IRLML5203TRPBF
Product Category:
MOSFET
Technology:
Si
Transistor Polarity:
P-Channel
Number Of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
3 A
Rds On - Drain-Source Resistance:
165 MOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs Th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
9.5 NC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.25 W
Channel Mode:
Enhancement
Height:
1.1 Mm
Length:
2.9 Mm
Width:
1.3 Mm
Factory Packing Quantity:
3000
Product Description

        IRLML5203TRPBF Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl

 

 

 

1.Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
RoHS Compliant, Halogen-Free

2.Description
These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the extremely lowon-resistance per silicon area. This benefit provides thedesigner with an extremely efficient device for use in batteryand load management applications.
A thermally enhanced large pad leadframe has beenincorporated into the standard SOT-23 package to produce aHEXFET Power MOSFET with the industry's smallest footprint.This package, dubbed the Micro3TM, is ideal for applicationswhere printed circuit board space is at a premium. The lowprofile (<1.1mm) of the Micro3 allows it to fit easily intoextremely thin application environments such as portableelectronics and PCMCIA cards. The thermal resistance andpower dissipation are the best available

3.IRLML5203TRPBF Infineon / IRUltra  Low  On-Resistance Low Gate Charge P-Channel MOSFET MOSFET 0

 

Tags: 

lm338k

products
PRODUCTS DETAILS
IRLML5203TRPBF Infineon / IRUltra Low On-Resistance Low Gate Charge P-Channel MOSFET MOSFET
MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 3000PCS/REEL
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 18000PCS/WEEk
Detail Information
Place of Origin
CHIAN
Brand Name
Infineon / IR
Certification
ROHS
Model Number
IRLML5203TRPBF
Product Category:
MOSFET
Technology:
Si
Transistor Polarity:
P-Channel
Number Of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
3 A
Rds On - Drain-Source Resistance:
165 MOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs Th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
9.5 NC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.25 W
Channel Mode:
Enhancement
Height:
1.1 Mm
Length:
2.9 Mm
Width:
1.3 Mm
Factory Packing Quantity:
3000
Minimum Order Quantity:
10PCS
Price:
NEGOTIABLE
Packaging Details:
3000PCS/REEL
Delivery Time:
2-3DAYS
Payment Terms:
T/T, Western Union
Supply Ability:
18000PCS/WEEk
Product Description

        IRLML5203TRPBF Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl

 

 

 

1.Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
RoHS Compliant, Halogen-Free

2.Description
These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the extremely lowon-resistance per silicon area. This benefit provides thedesigner with an extremely efficient device for use in batteryand load management applications.
A thermally enhanced large pad leadframe has beenincorporated into the standard SOT-23 package to produce aHEXFET Power MOSFET with the industry's smallest footprint.This package, dubbed the Micro3TM, is ideal for applicationswhere printed circuit board space is at a premium. The lowprofile (<1.1mm) of the Micro3 allows it to fit easily intoextremely thin application environments such as portableelectronics and PCMCIA cards. The thermal resistance andpower dissipation are the best available

3.IRLML5203TRPBF Infineon / IRUltra  Low  On-Resistance Low Gate Charge P-Channel MOSFET MOSFET 0

 

Tags: 

lm338k

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