Place of Origin: | CHINA |
Brand Name: | INFINEON |
Certification: | ROHS |
Model Number: | IRF100S201 |
Minimum Order Quantity: | 10PCS |
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Price: | NEGOTIABLE |
Packaging Details: | 800pcs/reel |
Delivery Time: | 2-3DAYS |
Payment Terms: | T/T, Western Union |
Supply Ability: | 8000pcs/week |
Product Category: | MOSFET | Transistor Polarity: | N-Channel |
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Number Of Channels: | 1 Channel | Vds - Drain-Source Breakdown Voltage: | 100 V |
Id - Continuous Drain Current: | 192A | Rds On - Drain-Source Resistance: | 4.2 MOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V | Vgs Th - Gate-Source Threshold Voltage: | 2 V |
Qg - Gate Charge: | 170 NC | Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C | Pd - Power Dissipation: | 441W |
Height: | 2.3 Mm | Length: | 6.5 Mm |
Width: | 6.22 Mm | Forward Transconductance - Min: | 278 S |
Fall Time: | 100 Ns | Rise Time: | 97 Ns |
Typical Turn-Off Delay Time: | 110 Ns | Typical Turn-On Delay Time: | 17 Ns |
Factory Pack Quantity: | 800 | ||
High Light: | IR N Channel MOSFET,BLDC Motor N Channel MOSFET,192A IR MOSFET |
1. Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
2. Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
3.HEXFET® Power MOSFET
4.Why choose us?
100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service
Contact Person: Mr. 段
Tel: 86-755-82715827
Fax: 86-755-22678033
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