Place of Origin: | CHINA |
Brand Name: | ON |
Certification: | ROHS |
Model Number: | FDS6679AZ |
Minimum Order Quantity: | 10PCS |
---|---|
Price: | NEGOTIABLE |
Packaging Details: | 2500PC/REEL |
Delivery Time: | 2-3DAYS |
Payment Terms: | T/T, Western Union |
Supply Ability: | 10000PCS/WEEK |
Technology: | Si | Transistor Polarity: | P-Channel |
---|---|---|---|
Number Of Channels: | 1 Channel | Vds - Drain-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 13 A | Rds On - Drain-Source Resistance: | 9.3 MOhms |
Vgs - Gate-Source Voltage: | - 25 V, + 25 V | Vgs Th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 96 NC | Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C | Pd - Power Dissipation: | 2.5W |
Height: | 1.75 Mm | Length: | 4.9 Mm |
Transistor Type: | 1P Channel | Width: | 3.9 Mm |
Fall Time: | 92 Ns | Rise Time: | 15 Ns |
Typical Turn-Off Delay Time: | 210 Ns | Typical Turn-On Delay Time: | 13 Ns |
Factory Pack Quantity: | 2500 | ||
High Light: | FDS6679AZ Power Management Integrated Circuits,2.5W Power Management Integrated Circuits,1P Channel Load Switching IC |
FDS6679AZ MOSFET -30V P-Channel PowerTrench MOSFET This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs
1.General Description
This P-Channel MOSFET is producted using ONSemiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs
2.Features
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely lowrDS(on)
High power and current handing capability
RoHS Compliant
Contact Person: Mr. 段
Tel: 86-755-82715827
Fax: 86-755-22678033
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