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2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel
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2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel
  • name
  • name

2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel

MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 2500PC/REEL
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 10000PCS/WEEK
Details Information
Product Description
Detail Information
Place of Origin
CHINA
Brand Name
ON
Certification
ROHS
Model Number
FDS6679AZ
Technology:
Si
Transistor Polarity:
P-Channel
Number Of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
13 A
Rds On - Drain-Source Resistance:
9.3 MOhms
Vgs - Gate-Source Voltage:
- 25 V, + 25 V
Vgs Th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
96 NC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5W
Height:
1.75 Mm
Length:
4.9 Mm
Transistor Type:
1P Channel
Width:
3.9 Mm
Fall Time:
92 Ns
Rise Time:
15 Ns
Typical Turn-Off Delay Time:
210 Ns
Typical Turn-On Delay Time:
13 Ns
Factory Pack Quantity:
2500
Highlight:

FDS6679AZ Power Management Integrated Circuits

,

2.5W Power Management Integrated Circuits

,

1P Channel Load Switching IC

Product Description

FDS6679AZ MOSFET -30V P-Channel PowerTrench MOSFET This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs

 

1.General Description
This P-Channel MOSFET is producted using ONSemiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs

2.Features
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely lowrDS(on)
High power and current handing capability
RoHS Compliant

2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel 0

 

Tags: 

lm338k,  

FDS6679AZ Power Management Integrated Circuits,  

2.5W Power Management Integrated Circuits

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products
PRODUCTS DETAILS
Products

Electronic Integrated Circuits

IGBT Module

GPS Module

Quectel Module

3G Module

CCD CMOS Sensor

2G Module

IGBT Driver

TE Relay

GSM GPRS Module

IP Camera Soc

LTE 4G Module

Switching Power Supply

Motor Cooling Fan

PCB Prototype

PCB Assembly
2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel
  • name
  • name
2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel
MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 2500PC/REEL
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 10000PCS/WEEK
Detail Information
Product Description
Detail Information
Place of Origin
CHINA
Brand Name
ON
Certification
ROHS
Model Number
FDS6679AZ
Technology:
Si
Transistor Polarity:
P-Channel
Number Of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
13 A
Rds On - Drain-Source Resistance:
9.3 MOhms
Vgs - Gate-Source Voltage:
- 25 V, + 25 V
Vgs Th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
96 NC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5W
Height:
1.75 Mm
Length:
4.9 Mm
Transistor Type:
1P Channel
Width:
3.9 Mm
Fall Time:
92 Ns
Rise Time:
15 Ns
Typical Turn-Off Delay Time:
210 Ns
Typical Turn-On Delay Time:
13 Ns
Factory Pack Quantity:
2500
Minimum Order Quantity:
10PCS
Price:
NEGOTIABLE
Packaging Details:
2500PC/REEL
Delivery Time:
2-3DAYS
Payment Terms:
T/T, Western Union
Supply Ability:
10000PCS/WEEK
Highlight

FDS6679AZ Power Management Integrated Circuits

,

2.5W Power Management Integrated Circuits

,

1P Channel Load Switching IC

Product Description

FDS6679AZ MOSFET -30V P-Channel PowerTrench MOSFET This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs

 

1.General Description
This P-Channel MOSFET is producted using ONSemiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs

2.Features
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely lowrDS(on)
High power and current handing capability
RoHS Compliant

2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel 0

 

Tags: 

lm338k,

FDS6679AZ Power Management Integrated Circuits,

2.5W Power Management Integrated Circuits

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Tel: 86-755-82715827
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