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2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel

2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel

  • 2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel
  • 2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel
2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel
Product Details:
Place of Origin: CHINA
Brand Name: ON
Certification: ROHS
Model Number: FDS6679AZ
Payment & Shipping Terms:
Minimum Order Quantity: 10PCS
Price: NEGOTIABLE
Packaging Details: 2500PC/REEL
Delivery Time: 2-3DAYS
Payment Terms: T/T, Western Union
Supply Ability: 10000PCS/WEEK
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Detailed Product Description
Technology: Si Transistor Polarity: P-Channel
Number Of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: 9.3 MOhms
Vgs - Gate-Source Voltage: - 25 V, + 25 V Vgs Th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 96 NC Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2.5W
Height: 1.75 Mm Length: 4.9 Mm
Transistor Type: 1P Channel Width: 3.9 Mm
Fall Time: 92 Ns Rise Time: 15 Ns
Typical Turn-Off Delay Time: 210 Ns Typical Turn-On Delay Time: 13 Ns
Factory Pack Quantity: 2500
High Light:

FDS6679AZ Power Management Integrated Circuits

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2.5W Power Management Integrated Circuits

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1P Channel Load Switching IC

FDS6679AZ MOSFET -30V P-Channel PowerTrench MOSFET This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs

 

1.General Description
This P-Channel MOSFET is producted using ONSemiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs

2.Features
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely lowrDS(on)
High power and current handing capability
RoHS Compliant

2.5W FDS6679AZ Power Management Integrated Circuits 1P Channel 0

 

Contact Details
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Tel: 86-755-82715827

Fax: 86-755-22678033

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