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BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

  • BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW
  • BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW
BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW
Product Details:
Place of Origin: CHINA
Brand Name: Infineon Technologies
Certification: ROHS
Model Number: BF999 E6327
Payment & Shipping Terms:
Minimum Order Quantity: 10PCS
Price: NEGOTIABLE
Packaging Details: 3000PCS/REEL
Delivery Time: 2-3DAYS
Payment Terms: T/T, Western Union
Supply Ability: 12000PCS/WEEK
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Detailed Product Description
Transistor Polarity: N-Channel Technology: Si
Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: 20 V
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C
Height: 1 Mm Length: 2.9 Mm
Width: 1.3 Mm Pd - Power Dissipation: 200mW
Vgs - Gate-Source Voltage: 6.5 V Factory Pack Quantity: 3000
High Light:

Silicon N Channel MOSFET Triode

,

E6327 N Channel MOSFET Triode

,

200mW RF MOSFET Transistors

BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode

1.Silicon N-Channel MOSFET Triode

For high-frequency stages up to 300 MHz preferably in FM applications
• Pb-free (RoHS compliant) package1)

BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW 0

 

BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW 1

 

 

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100% new and originao with Advantage price
High efficiency
Fast Delivery
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10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
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Contact Details
Shenzhen Hongxinwei Technology Co., Ltd

Contact Person: Mr. 段

Tel: 86-755-82715827

Fax: 86-755-22678033

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