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BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW

MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 3000PCS/REEL
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 12000PCS/WEEK
Detail Information
Place of Origin
CHINA
Brand Name
Infineon Technologies
Certification
ROHS
Model Number
BF999 E6327
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
30 A
Vds - Drain-Source Breakdown Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Height:
1 Mm
Length:
2.9 Mm
Width:
1.3 Mm
Pd - Power Dissipation:
200mW
Vgs - Gate-Source Voltage:
6.5 V
Factory Pack Quantity:
3000
Highlight:

Silicon N Channel MOSFET Triode

,

E6327 N Channel MOSFET Triode

,

200mW RF MOSFET Transistors

Product Description

BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode

1.Silicon N-Channel MOSFET Triode

For high-frequency stages up to 300 MHz preferably in FM applications
• Pb-free (RoHS compliant) package1)

BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW 0

 

BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW 1

 

 

2.Why choose us?

100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service

products
PRODUCTS DETAILS
BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW
MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 3000PCS/REEL
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 12000PCS/WEEK
Detail Information
Place of Origin
CHINA
Brand Name
Infineon Technologies
Certification
ROHS
Model Number
BF999 E6327
Transistor Polarity:
N-Channel
Technology:
Si
Id - Continuous Drain Current:
30 A
Vds - Drain-Source Breakdown Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Height:
1 Mm
Length:
2.9 Mm
Width:
1.3 Mm
Pd - Power Dissipation:
200mW
Vgs - Gate-Source Voltage:
6.5 V
Factory Pack Quantity:
3000
Minimum Order Quantity:
10PCS
Price:
NEGOTIABLE
Packaging Details:
3000PCS/REEL
Delivery Time:
2-3DAYS
Payment Terms:
T/T, Western Union
Supply Ability:
12000PCS/WEEK
Highlight

Silicon N Channel MOSFET Triode

,

E6327 N Channel MOSFET Triode

,

200mW RF MOSFET Transistors

Product Description

BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode

1.Silicon N-Channel MOSFET Triode

For high-frequency stages up to 300 MHz preferably in FM applications
• Pb-free (RoHS compliant) package1)

BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW 0

 

BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW 1

 

 

2.Why choose us?

100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service

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