Place of Origin: | CHINA |
Brand Name: | Infineon |
Certification: | ROHS |
Model Number: | IRFR540ZTRPBF |
Minimum Order Quantity: | 10PCS |
---|---|
Price: | NEGOTIABLE |
Packaging Details: | 2000PCS/REEL |
Delivery Time: | 2-3DAYS |
Payment Terms: | T/T, Western Union |
Supply Ability: | 20000PCS/WEEK |
Transistor Polarity: | N-Channel | Number Of Channels: | 1 Channel |
---|---|---|---|
Vds - Drain-Source Breakdown Voltage: | 100 V | Id - Continuous Drain Current: | 35 A |
Rds On - Drain-Source Resistance: | 28.5 MOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs Th - Gate-Source Threshold Voltage: | 4 V | Qg - Gate Charge: | 59 NC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 91 W | Channel Mode: | Enhancement |
Configuration: | Single | Height: | 2.3 Mm |
Length: | 6.5 Mm | Transistor Type: | 1 N-Channel |
Width: | 6.22 Mm | Forward Transconductance - Min: | 28 S |
Fall Time: | 34 Ns | Rise Time: | 42 Ns |
Factory Pack Quantity: | 2000 | ||
High Light: | 35A N Channel MOSFT,39nC Qg N Channel MOSFT,IRFR540ZTRPBF 1 Channel MOSFT |
IRFR540ZTRPBF
1.Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Halogen-Free
2.Description
This HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175°C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating. These featurescombine to make this design an extremely efficientand reliable device for use in a wide variety ofapplications.SDG
3.
4Why choose us?
100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service
Contact Person: Mr. 段
Tel: 86-755-82715827
Fax: 86-755-22678033
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