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IRFR540ZTRPBF 100V 35A 39nC Qg N Channel MOSFT Lead Free
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IRFR540ZTRPBF 100V 35A 39nC Qg N Channel MOSFT Lead Free
  • name
  • name
  • name

IRFR540ZTRPBF 100V 35A 39nC Qg N Channel MOSFT Lead Free

MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 2000PCS/REEL
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 20000PCS/WEEK
Details Information
Product Description
Detail Information
Place of Origin
CHINA
Brand Name
Infineon
Certification
ROHS
Model Number
IRFR540ZTRPBF
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
35 A
Rds On - Drain-Source Resistance:
28.5 MOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs Th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
59 NC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
91 W
Channel Mode:
Enhancement
Configuration:
Single
Height:
2.3 Mm
Length:
6.5 Mm
Transistor Type:
1 N-Channel
Width:
6.22 Mm
Forward Transconductance - Min:
28 S
Fall Time:
34 Ns
Rise Time:
42 Ns
Factory Pack Quantity:
2000
Highlight:

35A N Channel MOSFT

,

39nC Qg N Channel MOSFT

,

IRFR540ZTRPBF 1 Channel MOSFT

Product Description

IRFR540ZTRPBF

1.Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Halogen-Free

2.Description
This HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175°C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating. These featurescombine to make this design an extremely efficientand reliable device for use in a wide variety ofapplications.SDG

3.IRFR540ZTRPBF 100V 35A 39nC Qg N Channel MOSFT Lead Free 0

IRFR540ZTRPBF 100V 35A 39nC Qg N Channel MOSFT Lead Free 1

4Why choose us?

100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service

Tags: 

lm338k,  

35A N Channel MOSFT,  

39nC Qg N Channel MOSFT

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products
PRODUCTS DETAILS
Products

Electronic Integrated Circuits

IGBT Module

GPS Module

Quectel Module

3G Module

CCD CMOS Sensor

2G Module

IGBT Driver

TE Relay

GSM GPRS Module

IP Camera Soc

LTE 4G Module

Switching Power Supply

Motor Cooling Fan

PCB Prototype

PCB Assembly
IRFR540ZTRPBF 100V 35A 39nC Qg N Channel MOSFT Lead Free
  • name
  • name
  • name
IRFR540ZTRPBF 100V 35A 39nC Qg N Channel MOSFT Lead Free
MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 2000PCS/REEL
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 20000PCS/WEEK
Detail Information
Product Description
Detail Information
Place of Origin
CHINA
Brand Name
Infineon
Certification
ROHS
Model Number
IRFR540ZTRPBF
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
35 A
Rds On - Drain-Source Resistance:
28.5 MOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs Th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
59 NC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
91 W
Channel Mode:
Enhancement
Configuration:
Single
Height:
2.3 Mm
Length:
6.5 Mm
Transistor Type:
1 N-Channel
Width:
6.22 Mm
Forward Transconductance - Min:
28 S
Fall Time:
34 Ns
Rise Time:
42 Ns
Factory Pack Quantity:
2000
Minimum Order Quantity:
10PCS
Price:
NEGOTIABLE
Packaging Details:
2000PCS/REEL
Delivery Time:
2-3DAYS
Payment Terms:
T/T, Western Union
Supply Ability:
20000PCS/WEEK
Highlight

35A N Channel MOSFT

,

39nC Qg N Channel MOSFT

,

IRFR540ZTRPBF 1 Channel MOSFT

Product Description

IRFR540ZTRPBF

1.Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Halogen-Free

2.Description
This HEXFET® Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175°C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating. These featurescombine to make this design an extremely efficientand reliable device for use in a wide variety ofapplications.SDG

3.IRFR540ZTRPBF 100V 35A 39nC Qg N Channel MOSFT Lead Free 0

IRFR540ZTRPBF 100V 35A 39nC Qg N Channel MOSFT Lead Free 1

4Why choose us?

100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service

Tags: 

lm338k,

35A N Channel MOSFT,

39nC Qg N Channel MOSFT

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3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: 86-755-82715827
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