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FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A

FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A

MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 3000PCS/REEL
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 12000PCS/WEEK
Detail Information
Place of Origin
TAIWAN
Brand Name
FORTUNE
Certification
ROHS
Model Number
FS8205A
Rain-Source Voltag:
20A
Drain Current (Continuous):
6A
Ate-Source Voltag:
±12
Drain Current (Pulsed) *1:
30A
Total Power Dissipation @TA=25oC:
1.5W
Total Power Dissipation @TA=75oC:
0.96W
Operating And Storage Temperature Range:
-55 To +150 ℃
Thermal Resistance Junction To Ambient*2:
83℃/W
Highlight:

Enhancement Mode MOSFET

,

FS8205A MOSFET

,

20V 6A n channel mosfet

Product Description

    FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

 

1.Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)

2.Features

RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications

3.Applications

Battery Protection
 Load Switch
Power Management

4.SwitchingTest Circuit

FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A 0

5.TSSOP-8L Dimension

FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A 1

6.Why choose us?

100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service

 

products
PRODUCTS DETAILS
FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A
MOQ: 10PCS
Price: NEGOTIABLE
Standard Packaging: 3000PCS/REEL
Delivery Period: 2-3DAYS
Payment Method: T/T, Western Union
Supply Capacity: 12000PCS/WEEK
Detail Information
Place of Origin
TAIWAN
Brand Name
FORTUNE
Certification
ROHS
Model Number
FS8205A
Rain-Source Voltag:
20A
Drain Current (Continuous):
6A
Ate-Source Voltag:
±12
Drain Current (Pulsed) *1:
30A
Total Power Dissipation @TA=25oC:
1.5W
Total Power Dissipation @TA=75oC:
0.96W
Operating And Storage Temperature Range:
-55 To +150 ℃
Thermal Resistance Junction To Ambient*2:
83℃/W
Minimum Order Quantity:
10PCS
Price:
NEGOTIABLE
Packaging Details:
3000PCS/REEL
Delivery Time:
2-3DAYS
Payment Terms:
T/T, Western Union
Supply Ability:
12000PCS/WEEK
Highlight

Enhancement Mode MOSFET

,

FS8205A MOSFET

,

20V 6A n channel mosfet

Product Description

    FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

 

1.Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)

2.Features

RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications

3.Applications

Battery Protection
 Load Switch
Power Management

4.SwitchingTest Circuit

FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A 0

5.TSSOP-8L Dimension

FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A 1

6.Why choose us?

100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service

 

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