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30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3

MOQ: 10pcs
Price: Negotiable
Standard Packaging: 6000pcs/Reel
Delivery Period: 2-3Days
Payment Method: T/T, Western Union
Supply Capacity: 120000
Detail Information
Place of Origin
CHINA
Brand Name
VISHAY
Certification
ROHS
Model Number
SIRA04DP-T1-GE3
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
Vds-Drain-source Breakdown Voltage:
30 V
Id-continuous Drain Current:
40 A
Rds On-Drain-source On Resistance:
1.8 MOhms
Vgs-gate-source Voltage:
-16 V, 20 V
Vgs Th- Gate-source Threshold Voltage:
1.1 V
Qg-gate Charge:
77 NC
Minimum Operating Temperature:
-55 C
Maximum Operating Temperature:
+ 150 C
Pd-power Dissipation:
62.5W
Channel Mode:
Enhancement
Transistor Type:
1 N-Channel
Forward Transconductance-minimum:
105 S
Fall Time:
8 Ns
Rise Time:
10 Ns
Highlight:

62.5W N Channel MOSFET

,

30V Vds N Channel MOSFET

,

SIRA04DP-T1-GE3

Product Description

        SIRA04DP-T1-GE3 ELECTRONIC INTEGRATED CIRCUITS

 

 

THE PowerPAK PACKAGEThe PowerPAK package was developed around the SO-8package (figure 1). The PowerPAK SO-8 utilizes the samefootprint and the same pin-outs as the standard SO-8. Thisallows PowerPAK to be substituted directly for a standardSO-8 package. Being a leadless package, PowerPAK SO-8utilizes the entire SO-8 footprint, freeing space normallyoccupied by the leads, and thus allowing it to hold a largerdie than a standard SO-8. In fact, this larger die is slightlylarger than a full sized DPAK die. The bottom of the dieattach pad is exposed for the purpose of providing a direct,low resistance thermal path to the substrate the device ismounted on. Finally, the package height is lower than thestandard SO-8, making it an excellent choice forapplications with space constraints.

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3 0

 

                              PowerPAK SO-8 SINGLE MOUNTING
The PowerPAK single is simple to use. The pin arrangement(drain, source, gate pins) and the pin dimensions are thesame as standard SO-8 devices (see figure 2). Therefore, thePowerPAK connection pads match directly to those of theSO-8. The only difference is the extended drain connectionarea. To take immediate advantage of the PowerPAK SO-8single devices, they can be mounted to existing SO-8 landpatterns

RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3 1

                  RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3 2

 

 

Q1. What is your terms of packing?

A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes after getting your authorization letters.

 

Q2. What is your MOQ?

A: We provide you small MOQ for each item, it depends your specific order!

 

Q3. Do you test or check all your goods before delivery?

A: Yes, we have 100% test and check all goods before delivery.

 

Q4: How do you make our business long-term and good relationship?

A:We keep good quality and competitive price to ensure our customers benefit ;

We respect every customer as our friend and we sincerely do business and make friends with them,It's not something that can be replaced.

 

Q5: How to contact us?
A: Send your inquiry details in the below,Click "Send"Now!!!

 

products
PRODUCTS DETAILS
30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3
MOQ: 10pcs
Price: Negotiable
Standard Packaging: 6000pcs/Reel
Delivery Period: 2-3Days
Payment Method: T/T, Western Union
Supply Capacity: 120000
Detail Information
Place of Origin
CHINA
Brand Name
VISHAY
Certification
ROHS
Model Number
SIRA04DP-T1-GE3
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
Vds-Drain-source Breakdown Voltage:
30 V
Id-continuous Drain Current:
40 A
Rds On-Drain-source On Resistance:
1.8 MOhms
Vgs-gate-source Voltage:
-16 V, 20 V
Vgs Th- Gate-source Threshold Voltage:
1.1 V
Qg-gate Charge:
77 NC
Minimum Operating Temperature:
-55 C
Maximum Operating Temperature:
+ 150 C
Pd-power Dissipation:
62.5W
Channel Mode:
Enhancement
Transistor Type:
1 N-Channel
Forward Transconductance-minimum:
105 S
Fall Time:
8 Ns
Rise Time:
10 Ns
Minimum Order Quantity:
10pcs
Price:
Negotiable
Packaging Details:
6000pcs/Reel
Delivery Time:
2-3Days
Payment Terms:
T/T, Western Union
Supply Ability:
120000
Highlight

62.5W N Channel MOSFET

,

30V Vds N Channel MOSFET

,

SIRA04DP-T1-GE3

Product Description

        SIRA04DP-T1-GE3 ELECTRONIC INTEGRATED CIRCUITS

 

 

THE PowerPAK PACKAGEThe PowerPAK package was developed around the SO-8package (figure 1). The PowerPAK SO-8 utilizes the samefootprint and the same pin-outs as the standard SO-8. Thisallows PowerPAK to be substituted directly for a standardSO-8 package. Being a leadless package, PowerPAK SO-8utilizes the entire SO-8 footprint, freeing space normallyoccupied by the leads, and thus allowing it to hold a largerdie than a standard SO-8. In fact, this larger die is slightlylarger than a full sized DPAK die. The bottom of the dieattach pad is exposed for the purpose of providing a direct,low resistance thermal path to the substrate the device ismounted on. Finally, the package height is lower than thestandard SO-8, making it an excellent choice forapplications with space constraints.

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3 0

 

                              PowerPAK SO-8 SINGLE MOUNTING
The PowerPAK single is simple to use. The pin arrangement(drain, source, gate pins) and the pin dimensions are thesame as standard SO-8 devices (see figure 2). Therefore, thePowerPAK connection pads match directly to those of theSO-8. The only difference is the extended drain connectionarea. To take immediate advantage of the PowerPAK SO-8single devices, they can be mounted to existing SO-8 landpatterns

RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3 1

                  RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3 2

 

 

Q1. What is your terms of packing?

A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes after getting your authorization letters.

 

Q2. What is your MOQ?

A: We provide you small MOQ for each item, it depends your specific order!

 

Q3. Do you test or check all your goods before delivery?

A: Yes, we have 100% test and check all goods before delivery.

 

Q4: How do you make our business long-term and good relationship?

A:We keep good quality and competitive price to ensure our customers benefit ;

We respect every customer as our friend and we sincerely do business and make friends with them,It's not something that can be replaced.

 

Q5: How to contact us?
A: Send your inquiry details in the below,Click "Send"Now!!!

 

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