Shenzhen Hongxinwei Technology Co., Ltd

To adopt new technology,to produce products of quality,to offer high-class service.

Home ProductsElectronic Integrated Circuits

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3

  • 30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3
  • 30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3
30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3
Product Details:
Place of Origin: CHINA
Brand Name: VISHAY
Certification: ROHS
Model Number: SIRA04DP-T1-GE3
Payment & Shipping Terms:
Minimum Order Quantity: 10pcs
Price: Negotiable
Packaging Details: 6000pcs/Reel
Delivery Time: 2-3Days
Payment Terms: T/T, Western Union
Supply Ability: 120000
Contact Now
Detailed Product Description
Transistor Polarity: N-Channel Number Of Channels: 1 Channel
Vds-Drain-source Breakdown Voltage: 30 V Id-continuous Drain Current: 40 A
Rds On-Drain-source On Resistance: 1.8 MOhms Vgs-gate-source Voltage: -16 V, 20 V
Vgs Th- Gate-source Threshold Voltage: 1.1 V Qg-gate Charge: 77 NC
Minimum Operating Temperature: -55 C Maximum Operating Temperature: + 150 C
Pd-power Dissipation: 62.5W Channel Mode: Enhancement
Transistor Type: 1 N-Channel Forward Transconductance-minimum: 105 S
Fall Time: 8 Ns Rise Time: 10 Ns
High Light:

62.5W N Channel MOSFET

,

30V Vds N Channel MOSFET

,

SIRA04DP-T1-GE3

        SIRA04DP-T1-GE3 ELECTRONIC INTEGRATED CIRCUITS

 

 

THE PowerPAK PACKAGEThe PowerPAK package was developed around the SO-8package (figure 1). The PowerPAK SO-8 utilizes the samefootprint and the same pin-outs as the standard SO-8. Thisallows PowerPAK to be substituted directly for a standardSO-8 package. Being a leadless package, PowerPAK SO-8utilizes the entire SO-8 footprint, freeing space normallyoccupied by the leads, and thus allowing it to hold a largerdie than a standard SO-8. In fact, this larger die is slightlylarger than a full sized DPAK die. The bottom of the dieattach pad is exposed for the purpose of providing a direct,low resistance thermal path to the substrate the device ismounted on. Finally, the package height is lower than thestandard SO-8, making it an excellent choice forapplications with space constraints.

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3 0

 

                              PowerPAK SO-8 SINGLE MOUNTING
The PowerPAK single is simple to use. The pin arrangement(drain, source, gate pins) and the pin dimensions are thesame as standard SO-8 devices (see figure 2). Therefore, thePowerPAK connection pads match directly to those of theSO-8. The only difference is the extended drain connectionarea. To take immediate advantage of the PowerPAK SO-8single devices, they can be mounted to existing SO-8 landpatterns

RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3 1

                  RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single

30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3 2

 

 

Q1. What is your terms of packing?

A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes after getting your authorization letters.

 

Q2. What is your MOQ?

A: We provide you small MOQ for each item, it depends your specific order!

 

Q3. Do you test or check all your goods before delivery?

A: Yes, we have 100% test and check all goods before delivery.

 

Q4: How do you make our business long-term and good relationship?

A:We keep good quality and competitive price to ensure our customers benefit ;

We respect every customer as our friend and we sincerely do business and make friends with them,It's not something that can be replaced.

 

Q5: How to contact us?
A: Send your inquiry details in the below,Click "Send"Now!!!

 

Contact Details
Shenzhen Hongxinwei Technology Co., Ltd

Contact Person: Mr. 段

Tel: 86-755-82715827

Fax: 86-755-22678033

Send your inquiry directly to us
Other Products