Through Hole Electronic Integrated Circuits STW45NM60 MOSFET NCh 650 Volt 45 Amp

Through Hole Electronic Integrated Circuits STW45NM60 MOSFET NCh 650 Volt 45 Amp

Table 1. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage ±30 V ID Drain current (continuous) at TC = 25°C 45 A ID Drain current (continuous) at TC = 100°C 28 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 180 A PTOT Total dissipation at TC = 25°C 417 W Derating factor 3.33 W/°C dv/dt (2) 2. ISD < 45A, di/dt < 400A/µs, VDD < 80% V(BR)DSS Peak diode recovery voltage slope 15 V/ns Tstg Storage temperature –65 to 150 °C Tj Max. operating junction temperature 150 °C Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.3 °C/W Rthj-amb Thermal resistance junction-amb 30 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 15 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) 850 mJ

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