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55V 131A 5.3m Ohm 170nC Electronic Integrated Circuits Infineon IRF1405STRLPBF MOSFET

55V 131A 5.3m Ohm 170nC Electronic Integrated Circuits Infineon IRF1405STRLPBF MOSFET

  • 55V 131A 5.3m Ohm 170nC Electronic Integrated Circuits Infineon IRF1405STRLPBF MOSFET
  • 55V 131A 5.3m Ohm 170nC Electronic Integrated Circuits Infineon IRF1405STRLPBF MOSFET
  • 55V 131A 5.3m Ohm 170nC Electronic Integrated Circuits Infineon IRF1405STRLPBF MOSFET
55V 131A 5.3m Ohm 170nC Electronic Integrated Circuits Infineon IRF1405STRLPBF MOSFET
Product Details:
Place of Origin: CHINA
Brand Name: IR
Certification: ROHS
Model Number: F1405S
Payment & Shipping Terms:
Minimum Order Quantity: 10PCS
Price: Negotiable
Packaging Details: 800PCS/REEL
Delivery Time: 2-3DAYS
Payment Terms: T/T, Western Union
Supply Ability: 8000PCS/WEEK
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Detailed Product Description
Product Category: MOSFET Installation Style: SMD SMT
Package / Box: TO-252-3 Number Of Channels: 1 Channel
Transistor Polarity: N-Channel Vds-drain Source Breakdown Voltage: 55V
Id-continuous Drain Current: 131A Rds On-drain-source On-resistance: 5.3 MOhms
Vgs-gate-source Voltage: 20V Vgs Th-gate Source Threshold Voltage: 4V
Qg-gate Charge: 170 NC Package: Reel: Reel
Transistor Type: 1 N-Channel
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55V 131A 5.3m Ohm 170nC Electronic Integrated Circuits Infineon IRF1405STRLPBF MOSFET

 

                                                                   Typical Applications

Stripe Planar design of HEXFET® Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide variety
of applications.

                                            55V 131A 5.3m Ohm 170nC Electronic Integrated Circuits Infineon IRF1405STRLPBF MOSFET 0

 

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